Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure.

일반 예시GaN632.8 nm에서의 굴절률 및 소광 계수는2.37966및0. Below are files of complete refractive index and extinction coefficients. If the file is not available for download, you can request our proprietary file by clicking "Request".

Refractive Index Reference - Optical constants of crystalline and amorphous semiconductors, Adachi, pg 183

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