Surfscan^®

Unpatterned Wafer Defect Inspection Systems

The Surfscan^® SP7^XP unpatterned wafer inspection system identifies defects and surface quality issues that affect the performance and reliability of leading-edge logic and memory devices. It supports IC, OEM, materials and substrate manufacturing by qualifying and monitoring tools, processes and materials, including those used for EUV lithography. Using a DUV laser and optimized inspection modes, the Surfscan SP7^XP delivers ultimate sensitivity for advanced node R&D and the throughput to support high volume manufacturing. Complementary detection modes, including the phase contrast channel (PCC) and normal illumination (NI), detect unique defect types for bare wafers, smooth and rough films, and fragile resists and litho stacks. Image based defect classification (IBC) using revolutionary machine learning algorithms support faster time to root cause, while the Z7^™ classification engine supports unique 3D NAND and thick film applications.

Candela^® 8520

Surface Inspection and Photoluminescent System for Compound Semiconductor Materials

The Candela^® 8520 second generation integrated photoluminescence (PL) and surface inspection system is designed for advanced characterization of substrate and epitaxial defects on SiC and GaN substrates. It captures topographic variations, surface reflectance, phase shift and photoluminescence for automatic detection and classification of a broad range of defects of interest (DOI). This system employs proprietary optical technology to simultaneously measure scatter intensity at two angles of incidence. The Candela 8520 provides surface and photoluminescence defect inspection for GaN wafers, detecting and classifying GaN dislocations, pits and holes for GaN reactor defect control. Power applications include SiC based transparent wafer inspection and classification of crystal defects such as BPDs (Basal Plane Dislocations), micropipes, stacking faults, bar stacking faults, grain boundaries, and threading dislocations. Detection of topographic anomalies include triangle detection, carrot defects, downfall and scratches.

Candela^® 8720

Surface Inspection and Photoluminescent System for Compound Semiconductor Materials

The Candela^® 8720 advanced integrated surface defect inspection and photoluminescence (PL) defect inspection system captures a variety of mission-critical substrate and epitaxial defects. This system employs proprietary optical technology to simultaneously measure scatter intensity at two angles of incidence. It captures topographic variations, surface reflectivity, phase shift and photoluminescence for automatic detection and classification of a broad range of defects of interest (DOI). Applications of this advanced surface inspection system include GaN inspection for radio frequency (RF), power and high brightness light emitting diode (HBLED), with capability to detect cracks, crystal dislocation defects, hillocks, micropits, sliplines, bumps and hex bumps, and epi defects. The Candela 8720 inspection system is also used for defect inspection on other high-end compound semiconductor process materials such as Gallium Arsenide (GaAs) and Indium Phosphide (InP) for LED, VCSELs and photonics applications.

Candela^® 8420

Surface Defect Inspection for Compound Semiconductor Materials

The Candela^® 8420 surface defect inspection system uses multi-channel detection and rule-based defect binning to provide particle and scratch detection on opaque, translucent and transparent wafers such as Gallium Arsenide (GaAs), Indium Phosphide (InP), Lithium Tantalate, Lithium Niobate, glass, sapphire and other compound semiconductor materials. This surface defect inspection system employs proprietary OSA (optical surface analyzer) architecture to simultaneously measure scatter intensity, topographic variations, surface reflectivity and phase shift for automatic detection and classification of a broad range of defects of interest (DOI). Full-surface coverage is achieved in minutes, with the Candela 8420 surface defect inspection system to produce high resolution imaging and automated inspection reporting with defect classification and wafer maps. This tool offers improved sensitivity over single channel technologies.

The Candela CS20R configuration uses optics that are optimized to inspect compound semiconductor materials, including photosensitive films.

eDR7xxx^™

e-Beam Wafer Defect Review and Classification Systems

The eDR7380™ electron-beam (e-beam) wafer defect review and wafer classification system captures high resolution images of defects, producing an accurate representation of the defect population on a wafer. With a wide range of electron optics and a dedicated In-Lens Detector, the eDR7380 supports defect visualization across process steps, including fragile EUV lithography layers, high aspect ratio trench layers and voltage contrast layers. Unique Simul-6™ technology produces a complete DOI pareto in one test for accurate defect sourcing and faster excursion detection. With connectivity features, such as IAS™ for broadband optical patterned wafer inspectors and OptiSens™ for bare wafer inspectors, the eDR7380 provides unique linkage to KLA inspectors for faster yield learning during IC and wafer manufacturing.

eDR^® is a registered trademark of KLA Corporation.