Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III/V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

일반 예시GaAs632.8 nm에서의 굴절률 및 소광 계수는3.85744및0.1983491. Below are files of complete refractive index and extinction coefficients. If the file is not available for download, you can request our proprietary file by clicking "Request".

Refractive Index Reference - J. B. Theeten, D. E. Aspnes, and R. P. H. Chang, J. Appl. Phys. 49, 6097 (1978)

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